1. Material Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms arranged in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting outstanding atomic bond stamina.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is among the strongest in structural ceramics, giving outstanding thermal security, hardness, and resistance to chemical strike.
This durable covalent network leads to a material with a melting factor going beyond 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC preserves mechanical toughness and creep resistance at temperature levels above 1400 ° C, where several steels and conventional ceramics begin to soften or degrade.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal cycling without tragic splitting, an important attribute for crucible performance.
These innate homes stem from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which promote a highly secure and densely loaded crystal framework.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a decisive function in longevity and thermal shock resistance.
Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperatures above 2000 ° C, usually with boron or carbon ingredients to improve densification and grain limit communication.
This procedure produces a completely thick, fine-grained structure with marginal porosity (
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